Engineering the hydrogen storage properties of the perovskite hydride ZrNiH3 by uniaxial/biaxial strain

In the present work, the bonding length, electronic structure, stability, and dehydrogenation properties of the Perovskite-type ZrNiH₃ hydride, under different uniaxial/biaxial strains are investigated through ab-initio calculations based on the plane-wave pseudo-potential (PW-PP) approach. The findings reveal that the uniaxial/biaxial compressive and tensile strains are responsible for the structural deformation of the ZrNiH₃ crystal structure, and its lattice deformation becomes more significant with decreasing or increasing the strain magnitude. Due to the strain energy contribution, the uniaxial/biaxial strain not only lowers the stability of ZrNiH₃ but also decreases considerably the dehydrogenation enthalpy and decomposition temperature. Precisely, the formation enthalpy and decomposition temperature are reduced from ?67.73 kJ/mol.H₂ and 521 K for non-strained ZrNiH₃ up to ?33.73 kJ/mol.H₂ and 259.5 K under maximal biaxial compression strain of ε = ?6%, and to ?50.99 kJ/mol.H₂ and 392.23 K for the maximal biaxial tensile strain of ε = +6%. The same phenomenon has been also observed for the uniaxial strain, where the formation enthalpy and decomposition temperature are both decreased to ?39.36 kJ/mol.H₂ and 302.78 K for a maximal uniaxial compressive strain of ε = - 12%, and to ?51.86 kJ/mol.H₂ and 399 K under the maximal uniaxial tensile strain of ε = +12%. Moreover, the densities of states analysis suggests that the strain-induced variation in the dehydrogenation and structural properties of ZrNiH₃ are strongly related to the Fermi level value of total densities of states. These ab-initio calculations demonstrate insightful novel approach into the development of Zr-based intermetallic hydrides for hydrogen storage practical applications.     

Polymorphism in Gd2Ge2O7 ceramics: Structural,vibrational, and optical features

In this work, Gd₂Ge₂O₇ polymorphs were obtained by solid-state reactions at 1100–1300 °C. Structural and vibrational features were investigated by X-ray diffraction and Raman spectroscopy. For the triclinic (space group P1) polymorph, all the predicted phonons were discerned in perfect agreement with the group theory calculations, while for the tetragonal polymorph (space group P4₁2₁2), 53 bands of the 81 predicted modes could be identified and characterized. The Gd³⁺ 4f-4f electronic transitions were investigated by diffuse reflectance spectroscopy in the range 200–340 nm. By applying the Kubelka-Munk function, it was possible to determine the bandgap values for all ceramics studied. The tetragonal polymorph exhibited higher bandgap values (5.88 eV) than the triclinic one (5.59 eV), which are both more energetic than other pyrochlore polymorphs reported in the literature. The results indicate that the presence of polymorphism in Gd₂Ge₂O₇ ceramics can be used to produce tailor-made materials since their crystal structures have a strong influence on their optical properties. Consequently, these properties could be used to tuning the optical properties of Gd-containing materials to sensitize and transfer energy to other luminescent lanthanide ions, aiming for innovative applications.     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Facile fabrication of silk fibroin/graphene oxide composite films and real-time morphological observation in stretching

Layer-structured regenerated silk fibroin (SF)/graphene oxide (GO) composite films were fabricated by a facile solution casting method. Fourier transform infrared spectroscopy, X-ray diffraction, and thermal gravity analysis confirmed the successful incorporation and uniform dispersion of graphene oxides in the SF matrix. To visualize GO's effect on the morphological evolution, atomic force microscopic images were recorded in real-time during the composite elongation to establish a correlation between microscopic structural characters and macroscopic mechanical properties. The result showed that the incorporation of graphene oxide into the SF matrix resulted in chain conformational transition, film surface flattening, and mechanical reinforcement. Surface roughness dramatically decreased from 65 to 10 nm, while tensile modulus increased substantially from 8.61 to 22.37 MPa by adding well-dispersed graphene oxide up to 1 wt% into the SF matrix. Through the real-time AFM observation under the horizontal stretching mode, the surface topography of original SF films varied from tori-spherical aggregations to rod-like ones resulting from GO's incorporation. In the meantime, SF's hydrophobicity was also increased, as manifested by contact angle increase from 30.81° to 45.09°.     

Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Fabrication of barium titanate ceramics via digital light processing 3D printing by using high refractive index monomer

A digital light processing (DLP) technology has been developed for 3D printing lead-free barium titanate (BTO) piezoelectric ceramics. By comparing the curing and rheological properties of slurries with different photosensitive monomer, a high refractive index monomer acryloyl morpholine (ACMO) was chosen, and a design and preparation method of BTO slurry with high solid content, low viscosity and high curing ability was proposed. By further selecting the printing parameters, the single-layer exposure time was reduced and the forming efficiency has been greatly improved. Sintered specimens were obtained after a nitrogen-air double-step debinding and furnace sintering process, and the BTO ceramics fabricated with 80 wt% slurry shows the highest relative density (95.32 %) and piezoelectric constant (168.1 pC/N). Furthermore, complex-structured BTO ceramics were prepared, impregnated by epoxy resin and finally assembly made into hydrophones, which has significance for the future design and manufacture of piezoelectric ceramic-based composites that used in functional devices.     

Electric field-assisted synthesis/sintering cerium oxide: 5 wt.% gadolinium oxide

Gadolinium oxide ceramic powders were mixed to cerium oxide ceramic powders, pressed to pellets, and sintered either at 1450 °C or applying 200 V cm⁻¹ electric field at 800 °C, 900 °C and 1000 °C. The structural phases and the microstructure of the sintered pellets were analyzed by X-ray diffraction and scanning electron microscopy, respectively. The formation of substitutional solid solution was followed by monitoring the increase of the electrical conductivity by impedance spectroscopy and X-ray diffraction. The main results show that Joule heating due to the flow through the pellets of the electric current, which was produced by the application of the electric field, allows for promoting partial solid solution as well as partial sintering the ceria-gadolinia pellets. Moreover, grain growth that occurred in the high temperature sintered pellets was inhibited in the electric field-assisted synthesized/sintered pellets, being an alternative technique for producing cerium oxide-gadolinium oxide solid solutions.     

Synthesis and characterization of G/TiO1.80 bulk composite thermoelectric material under high temperature and high pressure

The primary purpose of this work is to introduce the second phase of graphene (G) into non-stoichiometric TiO_1.80 successfully and optimize the thermoelectric properties of this composite material through high pressure and high temperature (HPHT) technology. The purpose of doping Ti powder under high pressure is to create a closed reducing atmosphere to change the ratio of titanium to oxygen in the titanium oxide base. The addition of graphene can considerably improve the electrical properties of the material and reduce its resistivity. An X-ray diffractometer, X-ray photoelectron spectrometer, scanning electron microscope, and transmission electron microscope were used to analyze and characterize the phase structure, chemical bond, micro morphology and crystal morphology of the samples. An abundance of grain boundaries and lattice dislocation defects can inhibit the lattice thermal conductivity. We also tested and analyzed the thermoelectric performance of the high-temperature and high-pressure synthetic samples through a variable temperature system. The variation of the absorption intensity of the ultraviolet UV spectrum with wavelength shows that high pressure can reduce the band gap, which is beneficial to the carrier transition and improves the conductivity of semiconductors. HPHT optimizes both the electrical and the thermal parameters of the sample. At a final sintering pressure of 5.0 GPa, the dimensionless figure of merit (zT) of the bulk composite material G/TiO_1.80 was found to be 0.23 at 700 °C.     

Non-additive sintering of Si2N2O ceramic with enhanced high-temperature strength,oxidation resistance,and dielectric properties

The high-temperature mechanical and dielectric properties of Si₂N₂O ceramics are often limited by the introduction of a sintering aid. Herein, dense Si₂N₂O was prepared at 1700 °C by hot-pressing oxidized amorphous Si₃N₄ powder without sintering additives. A homogeneous network with short-range order and a SiN₃O structure was formed in the oxidized amorphous Si₃N₄ powder during the hot-pressing process. Si₂N₂O crystals preferentially nucleated at positions within the SiN₃O structure and grew into rod-like and plate-like grains. Fully dense ceramics with mainly crystalline Si₂N₂O and some residual amorphous phases were obtained. The as-prepared Si₂N₂O possessed a good flexural strength of 311 ± 14.9 MPa at 1400 °C, oxidation resistance at 1500 °C, and a low dielectric loss tangent of less than 5 × 10⁻³ at 1000 °C.